New ultra-low VCE(sat) NPN and PNP bipolar transistors from Diodes
Diodes has announced an expansion of its automotive-compliant bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series. These ultra-low VCE(sat) NPN and PNP transistors deliver industry-leading conduction efficiency and thermal performance, optimised for demanding automotive power switching and control.
The twelve high-performance devices support a broad voltage range, making them suitable for 12 V, 24 V, and 48 V automotive systems. They are ideal for gate driving MOSFETs and IGBTs, power line and load switching, low-dropout (LDO) voltage regulation, DC-DC conversion, and driving motors, solenoids, relays, and actuators. Rated for continuous operation up to +175°C, and offering high ESD robustness (HBM 4kV, CDM 1kV), they provide reliable operation in harsh automotive environments.
Housed in the ultra-compact PowerDI®3333-8 package (just 3.3mm x 3.3mm), these devices cut PCB footprint by up to 75% versus traditional SOT223, freeing space for additional functionality. A large underside heatsink delivers ultra-low thermal resistance (RθJL) of 4.2°C/W. The side-wall plateable (SWP) feature improves automated optical inspection (AOI) visibility and strengthens solder joints. This enhances quality assurance, reduces manual inspection, and supports efficient, reliable manufacturing.
Both series span BVCEO ratings from 30V to 100V and deliver robust current handling. The DXTN/P 80Q series provides extra headroom for demanding designs, with continuous ratings up to 10A and peak pulse capability of 20A. Ultra-low saturation voltage (just 17mV at 1A) and an on-state resistance as low as 12mΩ minimise conduction losses, enabling cooler operation and higher efficiency. This helps designers cut conduction losses by up to 50% versus previous generations, reducing heat and easing thermal management.
