Alliance Memory adds six 4Gbyte DDR4 SDRAMs
Alliance Memory has added six 4Gbit A die devices and Micron’s MT40A1G16KH-062E DDR4 SDRAM as a 16Gbit option.
The additions to the company’s CMOS DDR4 SDRAMs are the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN. They are A die versions of the 4Gbit AS4C256M16D4A and AS4C512M8D4 in the 96-ball and 78-ball FBGA packages, respectively. The new additions are built on a finer process for a smaller chip than the earlier versions, with lower power consumption and higher speeds and transfer rates at a lower cost. Continuing its partnership with Micron Technology, Alliance Memory also offers its MT40A1G16KH-062E DDR4 SDRAM as a 16Gbit option.
To increase battery life in portable electronics such as smartphones and tablets, the SDRAMs feature low operating voltages of +1.2V (±0.06V). The DDR4s are designed, qualified, and recommended for use in 5G designs, computing applications, surveillance systems, smart meters, human machine interfaces (HMI) and digital signal controllers. The process technology results in fast clock speeds up to 1600MHz and transfer rates up to 3200Mbits per second, said Alliance Memory.
The AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN support sequential and interleave burst types with varied read or write burst lengths on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. There is also auto- or self-refresh functions.
With minimal die shrinks, Alliance Memory’s DDR4 SDRAMs are drop-in, pin-for-pin-compatible replacements which saves the expense of redesigns and part requalification. Offered in commercial (0 to +95 degrees C) and industrial (-40 to +95 degrees C) temperature ranges, the A die devices are suitable for the industrial, networking, telecommunications, gaming and consumer markets.
Micron Technology’s MT40A1G16KH-062E offers access to a 16Gbit device for a wide range of applications. Operating from a +1.2V power supply over a commercial temperature range, the 1Gbit x 16-bit device is built on an 8n-pre-fetch architecture for high data rates of 3200Mtransfers per second. The MT40A1G16KH-062E supports read or write burst lengths of BC4 or BL8 on the fly.
Samples and production quantities of the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN are available now, with lead times of eight to 12 weeks. Micron’s MT40A1G16KH-062E is available now from stock.
