Alliance Memory’s AS9F parallel NAND flash memories support migration

1.8V and 3.3V SLC (single level cell) parallel NAND flash memories comply with the ONFI 1.0 specification and meet the demand for legacy memory in the automotive, industrial, communications and consumer electronics markets, said Alliance Memory.

The 1Gbit to 8Gbit AS9F series devices deliver fast block erase times as low as 3ms typical. Each model in the series has an eight bus wide I/O interface, making them suitable for use in chipsets for Wi-Fi routers, DSL and cable modems, set-top boxes, digital TVs, AI speakers and IoT devices. The memories are divided into blocks that can be erased independently, allowing valid data to be preserved in these applications while old data is erased.

The parallel NAND flash devices are reliable, said Alliance Memory, with 100,000 program/erase cycles, 4bit ECC per 528 bytes and a data retention period of 10 years.

They are supplied in 9.0 x 11.0 x 1.0mm 63-ball FBGA packages and are RoHS-compliant. They are available in industrial (-40 to +85 degrees C) and automotive (-40 to +105 degrees C) temperature ranges.

There are eight devices in the series, four 1.8V and four 3.3V models. Samples and production quantities are available now, with lead times of 12 weeks.

Alliance Memory provides critical and hard-to-find memory ICs for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The company’s product range includes flash, DRAM, and SRAM memory ICs with commercial, industrial, and automotive operating temperature ranges and densities from 64kbit to 16Gbyte.

The privately held company has headquarters in Kirkland, Washington, USA and regional offices in Europe, Asia, Canada, and South America.

http://www.alliancememory.com