Alpha and Omega Semiconductor releases AEC-Q101-qualified SiC MOSFETs

The AEC-Q101-qualified 1,200V SiC aSiC MOSFETs are available from Alpha and Omega Semiconductor. The AOM033V120X2Q is a 1,200V / 33mW SiC MOSFET based on the second generation aSiC MOSFET platform packaged in an optimised TO-247-4L.  They MOSFETs are designed for the high efficiency and reliability requirements of electric vehicle (EV) on-board chargers, motor drive inverters, and off-board charging stations.

The AOM033V120X2Q SiC MOSFETs are claimed to provide the industry-leading lowest on-resistance available for an automotive-qualified TO-247-4L with a standard gate drive of 15V.

They are AEC-Q101-qualified and PPAP-capable and have low Qrr and robust body diode and Kelvin-source connection for fast low-loss switching.

Vehicle manufacturers are increasingly implementing 800V electrical systems to reduce the system’s size and weight while increasing range and enabling significantly faster charging speeds. The 1,200V automotive grade aSiC MOSFETs provide superior switching performance and efficiency over standard silicon devices for superior switching performance and efficiency over standard silicon devices, reported Alpha and Omega Semiconductor.

Unlike the standard three-lead package, using an additional sense lead reduces the package inductance effects and enables the device to operate at a higher switching frequency with up to 75 per cent reduction in switching losses compared to standard packaging, said the company. The recommended 15V gate driving voltage allows for the widest compatibility of gate drivers, making it easy to adopt in a variety of system designs. The aSiC MOSFETs have a very low increase in on-resistance up to the rated 175 degrees C to minimise power losses and further increase efficiency.

“For the continued transformation of transportation to EV technology, vehicle manufacturers making efforts to increase range and reduce the time spent charging.  With our release of these automotive qualified 1200V aSiC MOSFETs, AOS can provide designers with next generation semiconductor technology to increase these efficiency targets,” said David Sheridan, senior director of Wide Bandgap Products at AOS.

The AOM033V120X2Q is immediately available for production quantities. AOS has said the automotive aSiC MOSFET portfolio will expand later this year to include a broader range of on-resistance and additional package options.

http://www.aosmd.com

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