Asymmetric GaN transistors build on STMicroelectronics MasterGaN technology
Leveraging its MasterGaN technology, STMicroelectronics has introduced the MasterGaN2 family, which contains two asymmetric GaN transistors, for soft switching and active rectification converter topologies.
The 650V normally-off GaN transistors have on-resistance (RDS(on)) of 150 mOhm and 225mOhm. Each is combined with an optimised gate driver, which makes the GaN technology as easy to use as ordinary silicon devices, says ST. By combining this level of integration with GaN’s inherent performance advantages, MasterGaN2 extends the efficiency gains, size reduction, and weight savings of topologies such as active clamp flyback, adds the company.
The MasterGaN power system in package (SiP) devices combine the two GaN high-electron-mobility transistors (HEMTs) and associated high voltage gate drivers in the same package with protection mechanisms built-in. A designer can connect external devices including Hall sensors and a controller such as a DSP, FPGA, or microcontroller, directly to the MasterGaN device. The inputs are compatible with logic signals from 3.3 to 15V, which helps simplify the circuit design and bill of materials. It also reduces the footprint and streamlines assembly.
Another benefit of the integration is to raise the power density of adapters and fast chargers. GaN technology is driving the evolution toward fast USB-PD adapters and smartphone chargers. MasterGaN devices enable these to become up to 80 per cent smaller and 70 per cent lighter, while charging three times faster compared to ordinary silicon-based adapters and chargers, claims ST.
The MasterGaN2 devices include low side and high side under-voltage lockout (UVLO), gate driver interlocks, a dedicated shutdown pin and over-temperature protection.
The 9.0 x 9.0 x 1.0mm GQFN package. For high voltage applications, it has a 2mm creepage distance between high voltage and low voltage pads.
MasterGaN2 is in production now.
