Automotive -80V P-channel Mosfet boost to power density
From Vishay Intertechnology comes the AEC-Q101 qualified p-channel -80V TrenchFet Mosfet. With a low on-resistance, the Vishay Siliconix SQJA81EP helps increase power density and efficiency in automotive applications. In the compact 5.13 mm x 6.15 mm PowerPak SO-8L single package with gullwing leads, the SQJA81EP offers on-resistance down to 17.3 m-Ohm maximum /14.3 m-Ohm typical at 10V.
The on-resistance of the automotive grade Mosfet is claimed by the company to be 28 per cent lower than the closest competing device in the Dpak package, has 50 per cent smaller footprint and is 31 per cent lower than previous-generation solutions. These values can help minimise power losses from conduction while allowing higher output for increased power density. Combined with the SQJA81EP’s gate charge down to 52 nC at 10V, which reduces losses from gate driving, the result is said by Vishay to be the best in class gate charge times on-resistance, a critical figure of merit for Mosfets used in power conversion applications.
With high temperature operation to 175 degrees C, the device provides the ruggedness and reliability required for automotive applications such as reverse polarity protection, battery management, high side load switching, and LED lighting. In addition, the SQJA81EP’s gullwing leads allow for increased automatic optical inspection capabilities and provide mechanical stress relief for increased board-level reliability.
The device’s -80V rating provides the safety margin required to support several popular input voltage rails, including 12 V, 24 V, and 48 V systems. The Mosfets increased power density saves PCB space in these systems by reducing the number of components needed in parallel. In addition, as a P-channel device, the SQJA81EP enables simpler gate drive designs that do not require the charge pump needed by its n-channel counterparts. Lead (Pb)-free, halogen-free, and RoHS-compliant, the Mosfet is 100 per cent Rg and UIS tested.