Automotive-qualified IGBT/SiC module drivers are for EcononDual modules
Gate driver boards for Infineon EconoDual modules make up the Scale EV family from Power Integrations. The modules are suitable for original, clone and new SiC variants in high power automotive and traction inverters for EV, hybrid and fuel cell vehicles including buses and trucks as well as construction, mining and agricultural equipment.
The Scale EV board level gate drivers incorporate two reinforced gate drive channels, associated power supplies and monitoring telemetry. The boards are automotive qualified and ASIL B-certified, enabling implementation of ASIL C traction inverter designs.
The first Scale EV family member is the 2SP0215F2Q0C, designed for the EconoDUAL 900 A 1200-volt IGBT half-bridge module.
The company said that the modules offer a product where the development, testing and qualification plus ASIL certification have already been done to reduce development time and cost.
The high level of integration provided by new driver ICs enables the entire driver board, including gate power, to fit onto the outline of the power module, while still providing the spacing necessary for reinforced isolation according to the IEC 60664 standard. The ASIC package provides 11.4mm of creepage and clearance, specifically designed to meet the requirements for 800V vehicle system voltages. Input and output lines to the system microcontroller are connected via two independent on-board connectors to meet functional safety requirements. A single 5V supply per channel is required, with other isolated voltages being generated on the board itself.
The Scale EV gate driver family is rated at 1200V for 400 and 800V systems and supports both SiC MOSFETs and silicon IGBTs. The design carries a 5,500m altitude rating and is optionally available with conformal coating for technical cleanliness requirements. The design includes active short-circuit, active discharge of connected DC link capacitor, over-voltage limitation via active gate control, diagnostic function such as gate monitoring, signal transmission monitoring and on-chip temperature monitoring, and short-circuit and over-current response of less than one microsecond for SiC MOSFETs and less than three microseconds for IGBTs.
Power Integrations includes a data sheet, pressFIT tool CAD design, the RDHP-2250Q adaptor breakout board and PC-based software. Power Integrations offers design services to tune switching performance for specific IGBT or SiC die, and to customise the layout for novel module form-factors.
Samples of the 2SP02152FQ are available now, with full production release in Q4 2022.
