Bourns adds 10 650V and 1220V SiC SB diodes
The silicon carbide (SiC) Schottky barrier diode (SBD) family available from Bourns is now larger, as the company adds 10 new models. The additional 650 and 1200V SiC diodes address the power density requirements of today’s transportation, renewable energy and industrial systems.
Bourns said its expanded wide band gap BSD SBD line delivers the peak forward surge, low forward drop, reduced thermal resistance and low power loss capabilities demanded by today’s high frequency and high current applications in order to help designers develop smaller, cost efficient and power electronics.
They can be used as power conversion solutions for DC/DC and AC/DC converters, switched mode power supplies (SMPS), photovoltaic inverters, motor drives and other rectification applications, advised Bourns. The 10 new models feature currents in the 5.0 to 10A range with no reverse recovery current to reduce EMI. This enables them to significantly lower energy losses and further increase efficiency, switching performance and reliability. In addition to thermal performance, the SiC SBD models are available in multiple forward voltage, current and package options that include TO220-2, TO247-3, TO252, TO263 and TO247-2.
The 10 new SiC SBD models are available now. They are RoHS compliant, halogen free, Pb free and their epoxy potting compound is flame retardant to the UL 94V-0 standard.
Bourns manufactures and supplies position and speed sensors, circuit protection solutions, magnetic components, microelectronic modules, panel controls and resistive products.
Headquartered in Riverside, California, USA, Bourns serves a broad range of markets, including automotive, industrial, consumer, communications, medical (low/medium risk) and audio market segments.