Bourns enters IGBT market with five models in the BID series
Five discrete IGBTs (insulated gate bipolar transistors) which make up the Model BID series mark Bourns’ entry into the sector. Based on its trench gate field-stop technology, the IGBTs provide low conduction / switching loss, said the company.
The 600 and 650V IGBTs are co-packaged with a fast recovery diode (FRD). The trench gate field stop technology provides greater control of dynamic characteristics, said Bourns. The Model BID series discrete IGBTs deliver lower collector-emitter saturation voltage (VCE(sat)) and lower switching losses compared to previous generation non-punch-through IGBTs, confirmed the company. The structure also provides a positive temperature co-efficient that helps increase device longevity and reduce power requirements in high voltage and high current designs, added the company.
Bourns offers four voltage/current model options in 600V / 5.0A, 600V / 20A, 600V / 30A and 650V / 50A.
The IGBTs are available in thermally-efficient TO-252, TO-247 and TO-247N packages and can provide a low thermal resistance Rth(j-c), making them suitable for switch mode power supplies (SMPS), uninterruptible power sources (UPS), induction heating and power factor correction (PFC) applications.
The BID Series of discrete IGBTs have been tested and qualified according to JEDEC standards for power switching products. The IGBTs are available now and are RoHS compliant and halogen free.
Bourns manufactures and supplies position and speed sensors, circuit protection solutions, magnetic components, microelectronic modules, panel controls and resistive products.
Headquartered in Riverside, California, USA, Bourns serves a broad range of markets, including automotive, industrial, consumer, communications, medical (low/medium risk) and audio market segments.