CoolGaN IPS family extends Infineon’s wideband gap range

Power switches based on wide bandgap (WBG) gallium nitride (GaN) enable “excellent efficiency and high switching frequency”, says Infineon, as it introduces half- and single-bridge integrated power stage (IPS) products at PCIM’s Digital Days.

The 600V CoolGaN half-bridge IPS IGI60F1414A1L is suitable for for compact and lightweight designs in the low-to-medium power range, such as chargers, adapters and switched mode power supplies.

The device is supplied in a thermally enhanced 8 x 8mm QFN-28 package. It combines two 140mΩ / 600V CoolGaN e-mode HEMT switches with dedicated galvanically isolated high- and low-side gate drivers from the company’s EiceDriver family.

The IGI60F1414A1L is controlled via the isolated gate driver with two digital PWM inputs. The integrated isolation function, the separation of digital and power ground and the reduced complexity of the PCB layout all contribute to shortening development time, lowering system bill of materials and reducing total cost, says Infineon. The gate driver’s input-to-output isolation is based on the company’s on-chip coreless transformer (CT) technology. According to the company, this guarantees high speed and robust operation, even for extremely fast switching transients with voltage slopes exceeding 150V/ns.

Switching behaviour can be adapted for different applications with the addition of a few passive gate path components. Examples of adaption are slew rate optimisation to reduce electromagnetic interference (EMI) efforts, steady-state gate current setting, and negative gate drive for robust operation in hard-switched applications.

System-in-package integration and the gate drivers’ stable propagation delay mean that the IGI60F1414A1L enables the lowest possible system dead-times, reports Infineon. This helps to maximise system efficiency, leading to the next level of power density up to 35 W/in³ for charger and adapter products, LLC resonant topology and motor drives.

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