Diodes enters SiC SBD market with 19 models
The first silicon carbide (SiC) Schottky barrier diodes (SBDs) from Diodes are the DSCxxA065 series, with 11 models and the DSCxx120 series with eight members. The SBDs in the DSCxxA065 series are rated at 650V (4.0, 6.0, 8.0 and 10A) and in the DSCxx120 series are rated at 1,200V (2.0, 5.0 and 10A).
These wide-bandgap SBDs are characterised by efficiency and high temperature reliability, while also responding to market demands for reduced system running costs and low maintenance, said Diodes. The devices are suitable for AC/DC, DC/DC and DC/AC switching converters, photovoltaic inverters, uninterruptable power supplies and industrial motor drive applications. They can also be used in a variety of other circuits, such as boost converters for power factor correction.
SiC affords many advantages compared to conventional silicon-based products, said Diodes. These include negligible switching losses due to low capacitive charge (QC) that provide high efficiency in fast switching applications. This is suitable for circuit designs with higher power density and smaller overall solution size.
They also exhibit low forward voltage (VF) that improves efficiency and reduces power losses and operational costs.
They also have reduced heat dissipation which helps lower overall system cooling budgets.
A high surge current capability increases robustness for better system reliability, while excellent thermal performance reduces build costs, added Diodes.
The SBDs are available in three package options, namely surface mount TO252-2 (Type WX), through-hole TO220AC (Type WX), and ITO220AC (Type WX-NC).
Diodes delivers semiconductor products to companies in the consumer electronics, computing, communications, industrial and automotive markets. It has a product portfolio of discrete, analogue and mixed-signal products and packaging technology to meet customers’ needs. It has worldwide operations at 32 sites, including engineering, testing, manufacturing, and customer service.