e-mode GaN FETs are designed to optimise yield
Normally-off e-mode GaN FETs reduce RDS(on) without affecting other parameters including threshold voltage and leakage, says Innoscience. The company‘s eight-inch GaN-on-Si FETs include a stress enhancement layer, which is claimed to significantly reduced RDS(on). Both epitaxy as well as device processing have been optimised to obtain high reproducibility and yield, added the company which is headquartered in Suzhou, China with design and sales support in California, USA and Belgium. All parts have passed quality and reliability tests in excess of JEDEC standards.
Founded in December 2015, Innoscience claims to be the largest integrated device manufacture (IDM) that is fully focused on GaN technology. The company has two wafer fabs including the world’s largest dedicated eight-inch GaN-on-Si site. Currently the company has a capacity of 10,000 eight-inch wafers per month which will ramp up to 14,000 per month later this year and 70,000 per month by 2025. The company has a wide portfolio of devices from 30V to 650V and has shipped more than 35 million parts for use in applications including USB PD chargers/adapters, data centres, mobile phones and LED drivers.
With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Innoscience’s vision is to create an energy ecosystem with the most effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions.
In November, 2017, Innoscience established a mass production eight-inch wafer line for GaN-on-Si devices in Zhuhai, China. In order to fulfil the rapidly growing power demands, Innoscience has inaugurated a new facility in the Suzhou (September 2020).
The GaN technology provider has over 300 R&D experts dedicated to delivering high performance and high reliability GaN power devices that can be used in diverse applications including cloud computing, electric vehicles (EVs) and automotive, portable devices, mobile phones, chargers and adapters.
