eGaN power transistor shrinks sizes compared to silicon options
Up to 30 times smaller than comparable silicon, the EPC2051 offers power systems designers a 100V, 25 mOhm, power transistor capable of 37A pulsed in a small chip-scale package.
The 100V GaN transistor from Efficient Power Conversion (EPC) is suitable for 48V power converters, lidar, and LED lighting. It has a maximum RDS(on) of 25 mOhm and a 37A pulsed output current for high efficiency power conversion in a small footprint (1.3 x 0.85mm).
It operates in a 50 to 12V buck converter and achieves 97 per cent efficiency at a 4.0A output while switching at 500kHz. The cost of the EPC2051 is low enough to bring the performance of GaN FETs to a price point comparable to silicon MOSFETs, says EPC, bringing their use in computing and telecomms systems, lidar LED lighting, and Class-D audio.
According to EPC, the EPC2051, is 30 times smaller than the closest silicon MOSFET.
The EPC9091 development board is a 100V maximum device voltage, half bridge featuring the EPC2051, and the UP1966A gate driver from uPI Semiconductor. The 50.8 x 50.8mm (2.0 x 2.0-inch) board is designed for optimal switching performance and contains all critical components for evaluation of the 100V EPC2051 eGaN FET.
The EPC2051 eGaN FET and the EPC9091 development board are available for immediate delivery from distributor Digi-Key.
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