EPC shrinks package with eGaN transistor
Packaged in a small chip-scale package, the EPC2050 is a 350V, 65-mOhm, 26A power transistor from Efficient Power Conversion (EPC). The transistor can be used in multi-level converters, EV charging, solar power inverters, and motor drives.
The EPC2050 has a maximum RDS(on) of 65-mOhm and a 26A pulsed output current. EPC says that it can be used in multi-level converter configurations, such as a three-level, 400V input to 48V output LLC converter for telecomms or server power supplies.
The EPC2050 is just 1.95 x 1.95mm (3.72mm²). EPC adds that given the size of the EPC2050, a highly efficient half bridge with gate driver occupies five times less area than a comparable silicon solution. Despite the small size of the chip-scale packaging, EPC2050 handles thermal conditions more efficiently than plastic packaged MOSFETs, continues the company. “The performance and cost gap of silicon with eGaN technology widens with the 350V, EPC2050, that is almost 20 times smaller than the closest silicon MOSFET,” said Alex Lidow, CEO EPC.
A development board is available to evaluate the EPC2050 eGaN FET. The EPC9084 development board is a 350V maximum device voltage, half bridge featuring the EPC2050, and the Silicon Labs Si8274GB1-IM gate driver. The2.0 x 1.5-inch (51 x 38mm) board is designed for optimal switching performance and contains all critical components for evaluation.
The FET and the board are available for immediate delivery from distributor, Digi-Key.
EPC claims to be the leader in enhancement mode gallium nitride (eGaN) -based power management devices. EPC was the first to introduce enhancement-mode GaN-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC/DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
