EPC Space pushes frontiers again with two more rad-hard GaN transistors
The EPC Space radiation-hardened (rad-hard) GaN transistor portfolio has been expanded to include two more models. The company has added a 100V and a 200V low RDS(on) GaN transistors, engineered to increase power density in spaceborne applications and other high-rel environments.
The two latest GaN transistors have low RDS(on) and low gate charge which reduces the cost of high power density solutions, said the company, and makes them more efficient than the nearest comparable radiation-hardened silicon MOSFET.
The 100V EPC7018G and 200V EPC7007B are supplied in hermetic packages with footprints of 8.0 x 5.6mm (EPC7018G) and 5.7 x 3.9mm (EPC7007B). RDS(on) is 6.0 mOhm (EPC7018G) and 28 mOhm (EPC7007B).
Chip-scale versions of this device are available.
According to EPC Space, power devices based on GaN significantly outperform silicon-based devices, exhibiting higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance. They also enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions, said the company.
They can be used in a range of applications including DC/DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation
EPC Space provides high-reliability radiation-hardened enhancement-mode gallium nitride (eGaN) power management for space and other harsh environments.
