Fast body diode MOSFET has lowest RDS(on), says Vishay Intertechnology
A fourth-generation 600V EF series fast body diode MOSFET is available from Vishay Intertechnology in a low profile PowerPak 10 x 12 package. The SiHK045N60EF is claimed to deliver the industry’s lowest RDS(on)*Qg figure of merit (FOM).
The Vishay Siliconix n-channel device enables high power density while lowering conduction and switching losses to increase efficiency, said the company.
The Vishay Siliconix n-channel SiHK045N60EF slashes on-resistance by 29 per cent compared with earlier generation devices while delivering 60 per cent lower gate charge. This is claimed to result in the industry’s lowest on-resistance times gate charge for devices in the same class, a key FoM for 600V MOSFETs used in power conversion applications.
The SiHK045N60EF is built on Vishay’s latest energy-efficient E Series superjunction technology. It has a low typical on-resistance of 0.045 Ohm at 10V which is 27 per cent lower than devices in the PowerPAK 8 x 8 package. The result is a higher power rating for applications equal to or greater than 3kW. The low profile of just 2.3mm is also claimed to increase power density. The MOSFET offers low gate charge down to 70 nC. The resulting FOM of 3.15 Ohm*nC is 2.27 per cent lower than the closest competing MOSFET in the same class, reports Vishay, which translates into reduced conduction and switching losses to save energy and increase efficiency. The device can therefore address the specific titanium efficiency requirements in server power supplies or reach 98 per cent peak efficiency in telecomms power supplies.
For improved switching performance in zero voltage switching (ZVS) topologies such as LLC resonant converters, the SiHK045N60EF provides low effective output capacitances Co(er) and Co(tr) of 171 pf and 1069 pF, respectively. The device’s Co(tr) is 8.79 per cent lower than the closest competing MOSFET in the same class, says Vishay. Its fast body diode provides a low Qrr of 0.8 microC for increased reliability in bridge topologies. The maximum junction to case thermal resistance rating is 0.45 degrees C per Watt, enabling the MOSFET’s PowerPAK 10 x 12 package to offer the best thermal capability of any surface mount package, according to the company. Compared to devices in the PowerPAK 8 x 8, the SiHK045N60EF provides 31 per cent lower thermal impedance.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. The SiHK045N60EF and other devices in the fourth-generation 600V EF Series address the need for efficiency and power density improvements in two of the first stages of the power system architecture, i.e., totem pole bridgeless power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications include edge computing and data storage, uninterruptible power supplies (UPS), high intensity discharge (HID) lamps and fluorescent ballast lighting, solar inverters, motor drives, battery chargers, welding equipment and induction heating.
Designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 per cent UIS testing, the MOSFET released today is RoHS-compliant and halogen-free.
Samples and production quantities of the SiHK045N60EF are available now.