First SiC Schottky barrier diodes released by Bourns cater for high power density
Six SiC Schottky barrier diodes (SBDs) are the first released from the company and are designed for applications that require higher efficiency, switching performance and low power loss characteristics.
The 650 to 1200V SiC Model BSD diodes feature “excellent current carrying and thermal capabilities” said the company, and high power density. These capabilities make Bourns SiC SBDs optimal high efficiency power conversion solutions for the growing number of high frequency applications that need to meet reduced size and lower system cost requirements, said Bourns. Telecomms or server switched mode power supplies (SMPS), photovoltaic (PV) inverters, PC power and motor drives are examples of target applications.
To address design demands for ever higher power efficiency, Bourns SiC SBDs feature low forward voltage (VF) and high thermal conductivity, which increases efficiency while lowering power dissipation, explained the company. This satisfies application requirements of 650V and 1200V solutions. There is no reverse recovery current to reduce EMI, enabling these SiC SBDs to significantly lower energy losses, claimed Bourns. In addition to 650 to 1200V operation with currents ranging from 6.0 to 10A, all six BSD models of wide band gap diodes offer various forward voltage, current and package options including TO220-2, TO247-3, TO252 and DFN8x8.
The six Bourns Model BSD SiC SBDs are available now. They are RoHS compliant, halogen free, Pb free and their epoxy potting compound is flame retardant to the UL 94V-0 standard.
Bourns manufactures and supplies position and speed sensors, circuit protection solutions, magnetic components, microelectronic modules, panel controls and resistive products.
The company is headquartered in Riverside, California, USA and serves a broad range of markets, including automotive, industrial, consumer, communications, medical (low/medium risk) and audio segments.
