Flash memory capability boosts X-Fab’s HV automotive process
Flash IP for X-Fab Silicon Foundries’ XP018 high voltage (HV) automotive process. It leverages X-Fab’s Silicon Oxide Nitride Oxide Silicon (SONOS) technology and is compliant with the AEC100-grade 0 automotive specification. It can withstand operation across a -40 to +175 degree C temperature range and supports the functional safety levels specified by ISO 26262.
The IP is supplied in a 32kbyte array size, following an 8K x 39-bit configuration, with a 32-bit data bus. A further seven bits are dedicated to error code correction (ECC) to ensure zero-defect reliability, says X-Fab. The proprietary XSTI embedded non-volatile memory (NVM) IP test interface is also included to enable full serial access to the memory.
The automotive-grade flash IP is capable of running on a single 1.8V power supply, making it well-suited to low-power designs. A built-in-self-test (BIST) module enables memory testing and debugging. X-Fab also offers a full NVM test service for customers who require it.
According to X-Fab, the IP enriches its 180nm open technology platforms, which come with a large selection of voltages and wafer materials.
“By being able to complement existing X-Fab platforms with new embedded flash capabilities, our customers will benefit from significant reductions in footprint, said Nando Basile, technology marketing manager for NVM solutions at X-Fab. The modular approach also means that fewer mask layers are going to be needed he added, to improve die optimisation.
The new flash IP means XP018 is now able to address mixed signal, high voltage applications where additional logic content and computational resources are required, added Basile. “This will specifically benefit battery operated devices, such as portable or autonomous smart sensors, with a great deal of potential in healthcare, industrial, consumer and IoT sectors.”
X-Fab analogue / mixed signal and MEMS foundry group manufactures silicon wafers for many applications, including automotive, industrial, consumer and medical.
X-Fab’s modular CMOS and SOI processes in geometries range from 1.0 micron to 130nm. It also offers silicon carbide (SiC) and MEMS long-lifetime processes. X-Fab’ss analogue-digital integrated circuits (mixed signal ICs), sensors and MEMS are manufactured at six production facilities in Germany, France, Malaysia and the U.S.