Four-lead Kelvin device is added to UF3C Fast FET series
Silicon carbide (SiC) power semiconductor manufacturer, UnitedSiC, expands its UF3C Fast series, adding a 1,200V SiC FET device in a TO-247-4L four-leaded Kelvin Sense discrete package option.
The UF3C120150K4S offers a typical on-resistance of 150 mOhm. There are now six four-leaded Fast series devices, ranging from 30 to 150 mOhm.
The UF3C120150K4S has a maximum operating temperature of 175 degrees C. It also has reverse recovery, low gate charge and low intrinsic capacitance. The ESD protected, HBM class 2 TO-247-4L package offers faster switching and much cleaner gate waveforms compared to a standard 3-leaded TO-247, says UnitedSiC. The four-pin Kelvin package avoids gate ringing and false triggering which would normally require switching speeds to be limited to manage the large common source inductance of three-leaded packages.
The UF3C120150K4S can be used for EV charging, photovoltaic inverters, switch mode power supplies, power factor correction (PFC) modules, motor drives and induction heating.
UThere are 13 devices in the UF3C Fast SiC series, in TO-247-3L and TO-247-4L packages with 1,200V and 650V options. The four-terminal Kelvin package offers easy screw or clamp mounting with very low junction-to-case thermal resistance, taking advantage of the high junction temperature capabilities of SiC.
UnitedSiC points out that designers can significantly enhance system performance, without the need to change gate drive voltage, by replacing existing Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices with UnitedSiC FETs.
UnitedSiC develops silicon carbide (SiC) FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for EV chargers, DC/DC converters and traction drives, as well as telecomms, server power supplies, variable speed motor drives and solar PV inverters.