FRAM provides 8 Mbit storage density
Fujitsu has launched an FRAM product with a storage density of 8 Mbit. The MB85R8M2T is suitable for use in industrial automation and financial logging systems, where a high data throughput is required and where data integrity is essential.
The new product is equipped with an SRAM compatible parallel interface, offering a more efficient alternative to battery backup SRAM, says the company.
Based on the features of FRAM as a non-volatile memory, such as fast overwrite at 150 ns and read/write endurance of 1013, MB85R8M2T can replace an SRAM and remove the backup battery at the same time.
As a result, manufacturers can achieve a more compact hardware system and a significant saving in component and maintenance cost combined with a commitment on long term product availability.
The MB85R8M2T offers a wide voltage range from 1.8V to 3.6 V.
It is available in a 48-pin FBGA package measuring 8.00 x 6.00 mm.
MB85R8M2T is in mass production stage. Samples are available immediately from FEEU.
Fujitsu Electronics Europe GmbH entered the market as a global distributor on January 1, 2016. FEEU markets complex solutions developed in-house by Fujitsu (and former Fujitsu) companies and third-party manufacturers.
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