GaN ePower stage IC reduces final product size, says EPC
Efficient Power Conversion (EPC) has introduced the ePower stage IC which integrates a GaN half bridge power stage capable of up to 35A at 1.0MHz operation. It offers, said EPC, higher performance and smaller solution size for high power density applications including DC/DC conversion, motor drives, and class D audio amplifiers.
The 100V, 35A IC is designed for 48V DC/DC conversion used in high density computing applications and in 48V brushless DC (BLDC) motor drives for e-mobility, robotics, and drones.
The EPC23102 eGaN IC is capable of a maximum withstand voltage of 100V and deliver up to 35A load current, while capable of switching speeds greater than 1.0MHz.
In particular, the EPC23102 uses EPC’s proprietary GaN IC technology which includes integrated input logic interface, level shifting, bootstrap charging and gate drive buffer circuits controlling 6.6 mOhm RDS(on) high side and low side FETs configured as a half bridge power stage.
The EPC23102 features a thermally enhanced QFN package with a footprint of 3.5 x 5.0mm, for a small form factor for the highest power density applications, said EPC.
When operated in a 48V to 12V buck converter, the EPC23102 delivers greater than 96 per cent peak efficiency at 1.0MHz switching frequency and around 8.0 to 17A of continuous load current with a rated current of 35A.
“The ePower family of products makes it easy for designers to take advantage of the significant performance improvements made possible with GaN technology,” said Alex Lidow, CEO and co-founder of EPC. “Integrated devices are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency. Designers can use these devices to make lighter weight and more precise BLDC motor drives, higher efficiency 48V input DC/DC converters, higher fidelity class D audio systems, and other industrial and consumer applications,” he said.
EPC also offers the EPC90147 development board featuring the EPC23102 ePower Stage IC. The 100V maximum device voltage, 35A maximum output current, half bridge board is designed to simplify the evaluation process of the EPC23102. It is a 2.0 x 2.0 inch (50.8 x 50.8mm) board designed for optimal switching and contains all critical components for easy evaluation, said EPC.
Designers interested in replacing silicon MOSFETs with a GaN device can use the EPC GaN Power Bench’s cross reference tool to find a suggested replacement based on their unique operating conditions. The cross-reference tool can be found at the EPC website.
