Gate drivers in SiC power modules suit high temperatures
Robust gate drivers for XM3 SiC MOSFET Power Modules from Wolfspeed are available from Cissoid. The CMT-TIT0697 gate drivers target high power density converters and a gate driver board safely drives the fast switching SiC power modules to achieve low losses and operates in high temperature environments found inside space-constrained motor drives, compact power supplies or fast battery chargers.
The CMT-TIT0697 gate driver board is to be directly mounted on CAB450M12XM3 1200V/450A SiC MOSFET power modules. It has an on-board isolated power supply delivering up to 2.5W per channel without derating up to 125°C (Ta). This is sufficient to drive XM3 modules up to 100KHz, enabling high power density, says Cissoid.
Peak gate current up to 10A and immunity to high dV/dt (>50KV/µs) enable the CMT-TIT0697 to drive the power module with zero gate resistance achieving minimum switching losses. The board withstands isolation voltages up to 3,600V (50Hz, 1min) and offers creepage distances of 14mm.
Protection includes under-voltage lockout (UVLO), active miller clamping (AMC), desaturation detection and soft-shut-down.
Cissoid specialises in high temperature semiconductors for the most demanding markets, particularly automotive. It provides solutions for efficient power conversion and compact motor drives, high voltage gate drivers for SiC and GaN transistors, power modules featuring low inductances and enhanced thermal performance and automotive grade components rated at 175 degrees C in excess of the AEC-Q100 Grade 0 qualification standard.
For the aviation, industrial and oil and gas markets, the company provides solutions for harsh environment signal conditioning, motor control, timing and power supplies that provide reliable operation from -55 to +225 degrees C.
