High-voltage super junction MOSFET meets industrial needs

Two package types are offered for the high-voltage super junction MOSFET with a 900V breakdown voltage and low total gate charge (Qg) announced by MagnaChip. The 90R1K4P is available in I-PAK and D-PAK options.

The 90R1K4P have maximum peak voltage of 950V and a breakdown voltage up to 900V. It can be used as an auxiliary power supply for industrial smart metering, which uses a three-phase input power to alternate current electric power generation, transmission, and distribution, advises the company.

It can also be used in the lighting of flyback topology in both AC/DC and DC/DC high-speed switching converters or as a power supply for lighting equipment where its high stability helps prevent an unstable system condition that could lead to outages.

The 90R1K4P increases its switching speed due to its low total gate charge (Qg), which reduces heat generation in the system, keeps power loss down and to improve energy efficiency, says MagnaChip. It also enables smaller form factors than the high-voltage planar MOSFET; the die size is over 50 per cent smaller under the same condition of conduction loss.

The 90R1K4P in a small I-PAK package type is the MMIS90R1K4P. For applications where space is at a premium, MagnaChip can also mount the super junction MOSFET into the slim surface mount devices (SMD) package type, D-PAK. It will be available as MMD90R1K4P.

The 90R1K4P will sample to customers in November 2018 and will be manufactured in high volume in early first quarter of 2019.

MagnaChip Semiconductor designs and manufactures analogue and mixed-signal semiconductors for communications, IoT, consumer, industrial and automotive applications. The Company’s Standard Products Group and Foundry Services Group provide a broad range of standard products and manufacturing services to customers worldwide. The company has been operating for over 30 years and owns a portfolio of approximately 3,100 registered patents and pending applications.