Hybrid IGBTs reduce loss and power consumption with built-in SiC diode
Hybrid IGBTs with an integrated 650V SiC Schottky barrier diode have been developed by Rohm Semiconductor. The RGWxx65C series is made up of the RGW60TS65CHR, RGW80TS65CHR and RGW00TS65CHR. The IGBTs are qualified to the AEC-Q101 automotive reliability standard. Intended applications are in automotive and industrial settings where large power is required to be handled, such as photovoltaic (PV) power conditioners, onboard chargers, and DC/DC converters used in electric and electrified vehicles.
The RGWxx65C series uses Rohm’s low loss SiC Schottky barrier diodes in the IGBT’s feedback block as a freewheeling diode that has almost no recovery energy and therefore minimal diode switching loss, reports Rohm. Additionally, since the recovery current does not have to be handled by the IGBT in turn-on mode, the IGBT turn-on loss is reduced significantly, claims the company. Combined, these effects result in up to 67 per cent lower loss over conventional IGBTs and 24 per cent lower loss compared with super junction MOSFETs (SJ MOSFETs) when used in vehicle chargers.
The RGW60TS65CHR, RGW80TS65CHR and RGW00TS65CHR IGBTs is sampling now with full production scheduled for December 2021.
Rohm offers a range of design data, accessible via its website, including simulation (Spice) models and application notes on drive circuit design to integrate and evaluate the devices.
Rohm Semiconductor develops and manufactures a large product range from SiC diodes and MOSFETs, analogue ICs such as gate drivers and power management ICs to power transistors and diodes to passive components. Production takes place in manufacturing plants located in Japan, Korea, Malaysia, Thailand, the Philippines, and China.
Lapis Technology (former OKI Semiconductor), SiCrystal GmbH and Kionix are companies of the Rohm Semiconductor Group. Rohm Semiconductor Europe has its head office near Dusseldorf serving the EMEA region (Europe, Middle East and Africa).
