IGBT freewheeling diodes improves turn-off capability
Designed for modern IGBT applications, such as high voltage DC transmission (HVDC) and flexible AC transmission system (FACTS), and medium voltage drives using voltage source converters, Infineon Prime Soft diodes are available from Infineon. These applications are marked by demanding requirements on power losses, points out the company.
The diode features an improved turn-off capability which now rates at 5kA/micro seconds. Prime Soft builds on Infineon’s IGCT freewheeling diode family which is based on a monolithic silicon design.
The diode has what is claimed to be an industry leading low on-state loss. This is enabled by the monolithic silicon design creating an active silicon area increased by more than 25 per cent compared to multichip diodes. This design improves the switching power up to six to 10MW at a maximum junction temperature of 140 degree C. Compared to a free-floating contact without solid metallurgical connection between silicon and molybdenum carrier, the thermal resistance of the new, bonded device is about 20 per cent lower, adds Infineon.
In addition to its reliability and thermal properties, Infineon says that the Prime Soft diodes feature minimum switching losses. Its soft reverse-recovery behaviour shows no improper oscillations under all relevant operating conditions. Further to the electric parameters, the mechanical concept simplifies the stack construction with series stacking of press-pack IGBTs and freewheeling diodes. This reduces the time needed for stack design by about 50 per cent.
The IGBT freewheeling diodes are in press-pack housings are available with 4.5kV blocking voltage. There are three versions, the D1600U45X122, D2700U45X122, and D4600U45X172 with different silicon diameters.
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