Infineon extends radiation-hardened memory portfolio with an industry first
Infineon has announced availability of the industry’s first radiation-hardened (rad hard) 1 and 2 Mb parallel interface ferroelectric-RAM (F-RAM) nonvolatile memory devices. These additions to Infineon’s portfolio of memories feature reliability and endurance, with up to 120 years of data retention at 85-degree Celsius, along with random access and full memory write at bus speeds.
Infineon F-RAM devices are intrinsically rad hard, and the technology is ideally suited for the evolving mission requirements of space-based applications that historically have used slower, less rugged EEPROM nonvolatile storage devices. Features compared to alternatives include faster memory random access, better data security with instant non-volatile write technology and low power, with extremely low programming voltage down to 2 V and maximum operating current of 20 mA.
Target applications for Infineon’s rad hard F-RAM devices include data storage for sensors and instruments, data logging for calibration data, secure key storage for data encryption, and boot code storage. In addition to outer space, they are also suitable for avionic and other applications that require military standard temperature grades (-55°C to 125°C).
