Infineon integrates body diode to CoolMOS for high power lighting

In response to market demand for enhanced form factors and energy-efficient products, Infineon Technologies has developed a new CoolMOS PFD7 high voltage MOSFET family, claimed to set a new benchmark in 950V superjunction (SJ) technology. 

The 950V series features an integrated fast body diode, claimed to make the device robust while reducing the BoM (bill of materials). The CoolMOS PFD7 MOSFETs are tailored to high-power density and high efficiency designs, primarily addressing lighting systems, as well as consumer and industrial SMPS (switched mode power supplies) applications.

The MOSFETs are suitable for flyback, PFC, and LLC/LCC designs, including half- or full-bridge configurations. By integrating a fast body diode with low reverse recovery charge (Q rr), the devices are rugged and reliable, said Rohm and are claimed to be the most robust SJ MOSFET in this voltage class, enabling usage across all topologies in the targeted applications. 

In addition, significantly reduced switching losses (E OSS, Q OSS, and Q g) improve efficiency in hard- and soft-switching applications and result in up to 4 degrees K lower MOSFET temperature compared to 900V CoolMOS C3 SJ MOSFETs, reported Infineon. They improve light- and full-load PFC efficiency by more than 0.2 per cent while matching the performance with regards to LLC efficiency.

The MOSFETs offer up to 55 per cent lower on resistance (RDSon) in surface mount and through-hole packages: for example, 450mΩ in DPAK or 60mΩ in TO247. This enables designers to use smaller packages and boost power density and board space savings at reduced BoM and production costs. 

A gate source threshold voltage of 3V with ±0.5V variation make the CoolMOS PFD7 MOSFETs easy to design-in and drive, said Infineon. The low threshold voltage and tolerance, mean that the MOSFET linear mode operation is avoided while allowing lower driving voltage and reduced idle loss. Additionally, a 60 per cent improved gate charge, compared to Infineon’s CoolMOS C3, results in significantly reduced driving losses. ESD ruggedness is ensured with a human body model (HBM) level of Class 2, providing reduced ESD-related failures and improved manufacturing yield.

The 950V CoolMOS PFD7 family and all product variants can be ordered now.

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