Infineon offers CoolSiC in 62mm package
Infineon has expanded its CoolSiC 1200V and 2000V MOSFET module families with a new industry standard package. The 62mm device is designed in half-bridge topology and is based on the recently introduced M1H SiC MOSFET technology. The package enables the use of SiC for mid-power applications from 250kW which is the point where silicon reaches the limits of power density with IGBT technology. The new package can be applied to solar, server, energy storage, EV charger, traction, commercial induction cooking and power conversion systems.
The M1H technology enables a significantly wider gate voltage window, said Infineon, for a highly robust driver and layout-induced voltage spikes at the gate without any restrictions, even at high switching frequencies. In addition, very low switching and transmission losses minimise cooling requirements. When combined with a high reverse voltage, the new CoolSiC MOSFETs can make converter designs more efficient, says Infineon, with the increase in the nominal power per inverter and system costs can be reduced.
The rugged mechanical design of the package with a baseplate and screw connections is optimised for highest system availability, minimum service costs and downtime losses. What is claimed to be outstanding reliability is achieved through high thermal cycling capability and a continuous operating temperature (T vjop) of 150 degrees C. The symmetrical internal package design provides identical switching conditions for the upper and lower switches. There is also the option to further enhance thermal performance with pre-applied thermal interface material (TIM).
The CoolSiC 62mm package MOSFETs are available in 1200V variants of 5mOhm/180A, 2mOhm/420A and 1mOhm/560A. The 2000V portfolio will include the 4mOhm/300A and 3mOhm/400A variants.
The portfolio will be completed in Q1 2024 with the 1200V/3mOhm and 2000V/5mOhm variants.
An evaluation board is available for rapid characterization of the modules (double pulse/continuous operation). It provides flexible adjustment of the gate voltage and gate resistors. At the same time, it can be used as a reference design for driver boards for volume production.