Innoscience doubles 650V E-mode GaN HEMT offering

With the introduction of 190, 350 and 600mOhm devices, joining the existing 140, 240 and 500mOhm RDS(on) parts, Innoscience Technology offers an expanded range of 650V E-mode GaN HEMT devices. 

The new HEMTs are supplied in industry standard 8.0 x 8.0mm and 5.0 x 6.0mm DFN packages.

All of the 650V HEMTs are qualified to JEDEC standards for chip and package and have passed dynamic high temperature operating life test (DHTOL) reliability testing according to JEP180 (JEDEC’s GaN technology guidelines). They have also undergone accelerated life tests beyond 1,000V that give lifetime calculations of 36 years at 80 per cent of the rated voltage (520V at 150 degrees C, 0.01 per cent failure rate).

The new HEMTs devices have drain source voltage transient (VDS, transient) of 800V for non-repetitive events. There is an extended pulse time up to 200 micro seconds and a pulsed drain source voltage for repetitive pulse up to 100 nanoseconds of 750V for the 190mOhm RDS(on) devices. Innoscience claimed these are best-in-class characteristics. The new additions also have an ESD protection circuit embedded in the die for ease of mass production assembly, packaging and handling, said the company.

The HEMTs are suitable for a range of applications including PFC converters, DC/DC converters, LED drivers, fast battery chargers, notebook and all in one adapters and power supplies for desktop PCs, TVs or power tools.

Yi Sun, senior vice president of product development at Innoscience, said: “I am especially happy to add the 650V/190mΩ, as it is becoming a standard in the GaN industry that offers greater flexibility to customers”.

GaN devices do not have a body diode, which means that reverse recovery losses are much less than silicon MOSFETs, explained Innoscience. GaN HEMTs can be used in simple totem pole configurations for PFC applications and benefit from the reduced bill of materials count without incurring the high losses conventionally resulting from conventional silicon devices, said the company.

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