LPSRAMs by Alliance Memory have embedded ECC
Alliance Memory has expanded its portfolio of low power asynchronous SRAM (LPSRAM) products with one and four-Mbit devices that feature embedded error-correction code (ECC).
Compared to previous generation devices, the AS6CE1016A (1-Mbit) and AS6CE4016B (4-Mbit) offer better failure in time (FIT) and mean time to failure (MTTF) characteristics with reduced soft error rates (SER). As a result they offer more reliable operation in a wide range of consumer, industrial, communications and medical applications.
The LPSRAMs’ ECC feature provides one-bit error correction per byte, which makes them particularly suitable for low power applications and battery backup non volatile memory applications, advised Alliance Memory. Data retention voltage for both devices is 1.5V with typical data retention current of 1.0 microA for the 1-Mbit AS6CE1016A and 2.0 microA for the 4-Mbit AS6CE4016B. The devices operate from a single power supply of 2.7V to 3.6V, and all inputs and outputs are TTL-compatible.
The enhanced performance LPSRAMs are designed to meet the demands of a wide range of applications, such as routers and switches in communications systems, programmable logic controllers in industrial automation systems, printers, gaming machines, musical instruments, and calculators, vending machines and ATMs, elevator / lift systems, control panels, and fire control systems.
Operating temperature is -40 to +85 degrees C.
Samples and production quantities of the AS6CE1016A (1-Mbit) and AS6CE4016B (4-Mbit) are in stock and available now. The 256k x 16 AS6CE4016B-45ZIN is offered in a 44-pin TSOP II package and the 256 x 16 AS6CE4016B-45BIN is offered in a 46-ball 6.0 x 8.0mm FBGA while the AS6CE1016A-45ZIN (64K x 16) is supplied in a 44-pin TSOP II package.
