MagnaChip improves on-resistance with 0.18 micron bipolar-CMOS-DMOS process

Analogue and mixed-signal semiconductor designer and manufacturer, MagnaChip Semiconductor now offers foundry customers its third generation 0.18 micron bipolar-CMOS-DMOS (BCD) process technology. The process technology is suitable for PMIC, DC/DC converters, battery charger ICs, protection ICs, motor driver ICs, LED driver ICs and audio amplifiers. The latest 0.18 micron BCD process technology offers improved specific on-resistance (Rsp) of power laterally diffused metal oxide semiconductor (LDMOS) that operates up to 40V with simplified manufacturing steps.

The ability of the BCD technology to reduce the number of components in power modules by having multiple functions in one chip drives demand for high-performance and power-efficient power ICs processed in BCD technology. BCD technology with lower Rsp LDMOS helps reduce chip size and power loss of power ICs. MagnaChip has been improving the Rsp of power LDMOS for last 10 years and this generation of 0.18 micron BCD process technology reduces the Rsp by approximately 30 per cent, compared to the previous generation.

BCD technology requirements vary for different applications and IC design schemes, explains MagnaChip. To cover various requirements, the company adopted the modular process concept that can generate diverse combinations of 1.8, 5.0 and 12 to 40V transistors. Next year, MagnaChip intends to release new devices such as tailored LDMOS devices, optimised for a specific range of operational voltages and LDMOS devices with low Vgs (bias between gate to source) that are suitable for power ICs with strict operational voltage limits and other operating at high frequencies.

The third generation BCD process technology offers optional devices to enhance design integration and flexibility. These include a high performance bipolar transistor, Zener diode, high resistance poly resistor with no additional photo layer, tantalum nitride resistor with low temperature coefficient, metal-insulator-metal capacitor, metal-oxide-metal capacitor, electrical fuse, and multi-time programmable memory.

To support power ICs for more stringent reliability requirements, for example automotive applications, this third generation BCD process technology was qualified based on the automotive grade qualification specification of AEC-Q100 with Grade1 temperature conditions between -40 to +125 degrees C.

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