Magnachip introduces eighth generation of 150V MXT MV MOSFETs
Available in new D2PAK-7L and PDFN56 packages, the eighth generation of MXT MV MOSFETs has been announced by Magnachip Semiconductor.
The two new 150V MXT MV MOSFETs using its eighth generation trench MOSFET technology.
Energy efficiency is crucial in high power devices for reducing power consumption and ensuring stability. The newly released 150V MXT MV MOSFETs (MDES15N056PTRH and MDU150N113PTVRH) were developed by leveraging Magnachip’s trench MOSFET technology. The RDS(on) of MDES15N056PTRH was reduced by 22 per cent compared to the previous generation, confirmed Magnachipe, enhancing energy efficiency in applications.
By improving the core cell and termination design, the Figure of Merit (RDS(on) x Qg) of MDES15N056PTRH and MDU150N113PTVRH has been improved by 23 and 39 per cent respectively, compared to the previous version. The adoption of surface mount type packages, such as D2PAK-7L (TO-263-7L) and PDFN56, reduces MOSFET sizes, enabling flexible design of various applications, such as motor controllers, battery management systems residential solar inverters and industrial power supplies.
YJ Kim, CEO of Magnachip, said: “Magnachip will continue to expand its high-efficiency MXT MOSFET product portfolio, including new releases based on 180nm microfabrication technology in the near future.”
Magnachip Semiconductor is a designer and manufacturer of analogue and mixed signal semiconductor platform solutions for communications, IoT, consumer, computing, industrial and automotive applications. The company provides a broad range of standard products to customers worldwide. Magnachip has more than 40 years’ of operating history- and owns a portfolio of approximately 1,100 registered patents and pending applications and has extensive engineering, design and manufacturing process expertise.
