MagnaChip offers automotive grade SoI bipolar CMOS DMOS process
Foundry customers of MagnaChip are offered a 0.18 micron bipolar-CMOS-DMOS (BCD) 200V high-voltage process which uses silicon on insulator (SoI) substrates with solid high-voltage isolation. The process extends MagnaChip’s existing BCD processes from 100 to 200V. Having 200V devices in a BCD process is valuable, explains MagnaChip, because it enables a power IC to be designed for high voltage applications, including automobiles, electrical vehicles, industrial motor drivers, ultrasonic medical imaging systems and solar panels.
Utilising SoI substrates and MagnaChip’s proprietary deep-trench isolation technology provides advantages over the bulk silicon-based BCD. Two types of power laterally diffused metal oxide semiconductor (LDMOS) are supported up to 200V. The first type has low specific on-resistance (Rsp), which increases packing density of power blocks. The second type supports full ranges of safe operation area (SOA) to guarantee long-term reliability with all ranges of drain to source voltage (VDS) and gate to source voltage (VGS). The process is claimed to result in higher isolation breakdown voltage, smaller isolation size, better substrate noise immunity, latch-up immunity and high-side isolation of power blocks with insulating silicon dioxide layer between active silicon layers and substrates.
Foundry customers can select either type, depending upon the circuit requirements.
Many option devices are also supported in the new 0.18 micron 200V BCD process to enhance design integration and flexibility, continues MagnaChip. These include high performance bipolar transistors, Zener diode, Schottky diode, high resistance poly resistor, metal-insulator-metal capacitor, metal-oxide-metal capacitor, electrical fuse and multi-time programmable memory.
Markets, such as automotive, require that power ICs are capable of achieving high-temperature reliability and high operation voltages. This is especially the case for electric vehicles and hybrid cars, as more 48V battery systems are adopted. To meet these increased demands, MagnaChip’s 200V BCD technology was qualified based on the automotive-grade-qualification specification of AEC-Q100 with Grade0 temperature condition between -40 to 150 degrees C.