Microchip releases SiC MOSFETs and diodes
Silicon carbide (SiC) MOSFETs and Schottky barrier diodes from Microchip, via its Microsemi subsidiary, have been added to its portfolio of SiC products.
The 700V SiC MOSFETs and 700 and 1200V SiC Schottky barrier diodes (SBDs)
offer more efficient switching at higher frequencies and pass ruggedness tests at levels considered critical for guaranteeing long-term reliability, reports the company.
According to the company, the SiC SBDs perform approximately 20 per cent better than other SiC diodes in unclamped inductive switching (UIS) ruggedness tests that measure how well devices withstand degradation or premature failure under avalanche conditions, which occur when a voltage spike exceeds the device’s breakdown voltage. Microchip also reports that its SiC MOSFETs outperform alternatives in these ruggedness tests, demonstrating excellent gate oxide shielding and channel integrity with little lifetime degradation in parameters even after 100,000 cycles of repetitive UIS (RUIS) testing.
Microchip supplies a range of both silicon and SiC discrete and module solutions for electric vehicle (EV) systems, including external charging stations, onboard chargers, DC/DC converters and powertrain/traction control.
The SiC devices are backed by Microchip’s obsolescence practice, which ensures devices will continue to be produced for as long as customers need them.
The expanded SiC portfolio is supported by a range of SiC SPICE models, SiC driver board reference designs and a power factor correction (PFC) Vienna reference design.
The SiC MOSFETs and SiC diodes are available in production volumes and in a variety of die and package options.