MOSFET increases power density for standard gate drives

Designed for standard gate drives, the Vishay Siliconix SiSS22DN is a 60V TrenchFET Gen IV n-channel power MOSFET. It is claimed to be the industry’s first MOSFET optimised for standard gate drives to deliver maximum on-resistance down to 4 mOhm at 10 V in the thermally enhanced 3.3 x 3.3mm PowerPAK 1212-8S package.

The SiSS22DN is designed to increase efficiency and power density in switching topologies, explains Vishay and features a low gate charge of 22.5 nC with low output charge (QOSS).

Unlike logic-level 60V devices, the typical VGS(th) and Miller plateau voltage of the SiSS22DN are enhanced for circuits with gate drive voltages above 6.0V, where the device provides optimised dynamic characteristics that enable short dead-times and prevent shoot-through in synchronous rectifier applications. The SiSS22DN’s industry-low on-resistance is 4.8 per cent lower than the next best product, and rivals the leading logic-level device, says Vishay. The  QOSS of 34.2 nC results in the best in class QOSS times on-resistance, adds the company. This is a critical figure of merit (FoM) for MOSFETs used in power conversion designs employing zero voltage switching (ZVS) or switch-tank topology. To achieve higher power density, the device uses 65 per cent less PCB space than similar solutions in 6.0 x 5.0mm packages.

The SiSS22DN’s specifications are fine-tuned to minimise conduction and switching losses simultaneously. The result is increased efficiency that can be realised in multiple power management system building blocks, including synchronous rectification in AC/DC and DC/DC topologies. They are also suitable for primary-side switching in DC/DC converters, half-bridge MOSFET power stages in buck-boost converters, and OR-ing functionality in telecomms and server power supplies. Other application examples are motor drive control and circuit protection in power tools and industrial equipment and battery protection and charging in battery management modules.

The MOSFET is 100 per cent RG- and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiSS22DN are available now, with lead times of 30 weeks subject to market conditions.

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