Mouser adds TI’s LMG1210 MOSFET and GaN FET driver
For high-frequency applications, Mouser Electronics stocks the LMG1210 200V half-bridge MOSFET and GaN FET driver from Texas Instruments (TI).
The LMG1210 is part of TI’s gallium nitride (GaN) power portfolio and enables higher efficiency, increased power density, and lower overall system size compared with traditional, silicon-based alternatives. They are optimised specifically for speed-critical power-conversion applications.
The TI LMG1210 is a 50MHz, half bridge driver designed to work with enhancement mode GaN FETs up to 200V.It has a fast propagation delay of 10 nano seconds, which is faster than traditional silicon half-bridge drivers, confirms Mouser. The device also provides a low switch-node capacitance of one pico Farad with user-adjustable dead time control to allow designers to optimise dead-time within a system.
The LMG1210 offers 3.4 nano seconds high side to low side delay matching, a minimum pulse width of four nano seconds and an internal LDO for a gate-drive voltage of 5.0V regardless of supply voltage. The driver also includes a common-mode transient immunity (CMTI) of more than 300V/nanoseconds, believed to one of the industry’s highest, for high system-noise immunity.
TI’s LMG1210 driver can be used in a range of power conversion applications, including high-speed DC/DC converters, motor control, Class-D audio amplifiers, Class-E wireless charging and RF envelope tracking.