New generation of eGaN technology claims to double performance
Efficient Power Conversion (EPC’s) 80.0V, 4 mOhm EPC2619 GaN fet in tiny 1.5×2.5mm footprint offers higher performance and smaller solution size than traditional mosfets for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12.0- 20.0V.
This is the lead product for a new generation of eGaN devices that the company claimed will have double the power density compared to EPC’s prior-generation products.
The maximum RDS(on) x area of the EPC2619 is 15 mΩ*mm2 – five times smaller than 80.0V silicon mosfets.
This product is designed for a range of motor drive applications. For example: 28.0-48.0V conversion for eBikes, eScooters and power tools; high density DC-DC converters; solar optimisers; and synchronous rectification converting 12.0- 20.0V for chargers, adaptors and TV power supplies.
The typical RDS(on) x QGD, which is indicative of power losses in hard-switching applications, is 10 times better than 80.0V silicon mosfets. This enables switching frequencies that are 10 times higher than silicon mosfets and without an efficiency penalty, so producing the highest power density. This makes the EPC2619 ideal for high frequency hard-switching 24.0-48.0V applications, such as used in buck, buck-boost and boost converters.
The typical RDS(on) x QOSS, which is indicative of power losses in soft-switching applications, is 87 mOhm*nC, two times better than 80.0V silicon mosfets. This makes the EPC2619 ideal for soft-switching applications, such as the primary rectification full bridge for LLC-based DCX DC-DC converters.
“This is just the first product of a new generation of discrete transistors and integrated circuits for EPC. With the launch of the EPC2619, EPC continues to keep GaN power devices on a path reminiscent of Moore’s Law,” noted Alex Lidow, EPC CEO and co-founder.
The EPS90153 development board is a half bridge featuring the EPC2619 GaN fet. It is designed for 80.0V maximum device voltage and 30.0A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market. This 50.8×50.8mm board is designed for optimal switching performance and contains all critical components for easy evaluation.
The EPC2619 is priced at $1.70 each in 1 Ku volumes.
The EPC90153 development board is price at $200.00 each.
EPC is the leader in enhancement mode gallium nitride (eGaN) based power management. eGaN fets and integrated circuits provide performance many times greater than the best silicon power mosfets in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, drones, and low-cost satellites.