NOR Flash is QML-V qualified for space-grade FPGAs

To address the growing need for high-reliability memories, Infineon Technologies offers high density radiation-tolerant NOR flash devices which are qualified to MIL-PRF-38535’s QML-V flow (QML-V Equivalent) – the highest quality and reliability standard certification for aerospace-grade ICs.

Space-grade FPGAs require reliable, high-density non-volatile memories that contain their boot configurations. Infineon’s 256Mbit and 512Mbit RadTol NOR flash non-volatile memories deliver superior, low-pin count, single chips for applications such as FPGA configuration, image storage, microcontroller data and boot code storage. When used at higher clock rates, the data transfer supported by the devices match or exceed traditional parallel asynchronous NOR flash memories. They also “dramatically” reduce pin count, claims Infineon. The devices are rad-tol up to 30krad (Si) biased and 125krad (Si) unbiased. At 125 degrees C, the NPR flash devices support 1,000 program/erase cycles and 30 years of data retention. At 85 degrees C they support 10k program/erase cycles with 250 years of data retention.

The RadTol 256Mbit quad-SPI (QSPI) and 512Mbit dual quad-SPI NOR flash devices are based on Infineon’s 65nm floating gate flash process technology. Both feature 133MHz SDR interface speed. The 512Mbit device comprises two independent 256Mbit die in a single package. Designers can operate the device in dual QSPI or single QSPI mode on either die independently, presenting the option to use the second die as a back up, if required.

Infineon is collaborating with FPGA ecosystem companies such as Xilinx on space-grade applications.

“Our radiation-tolerant dual QSPI non-volatile memories are fully supported by the latest space grade FPGAs. They enable a superior, low pin count, single chip select solution to configure processors and FPGAs,” said Helmut Puchner, vice president fellow of aerospace and defence at Infineon Technologies LLC. “The entire image for the Xilinx Kintex UltraScale XQRKU060, for example, can be loaded in about 0.2 seconds in dual quad mode.”

The NOR flash devices can be programmed in-system through the FPGA or through a standalone programmer, offered in the same 36-lead ceramic flat package.

The RadTol NOR Flash devices are available in a 24 x 12mm 2 36-lead ceramic flatpack package. The devices support temperature grades from -55 to +125 degrees C, with SEU rate of less than 1 x 10 -16 upsets/bit-day, SEL above  6MeV.cm 2/mg (85 degrees C), SEFI anove 60MeV.cm 2/mg (LET) and SEU threshold above 28Mev.cm 2/mg (LET).

Infineon offers a development kit and software for the design support.

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