OptiMOS 5 packaging to meet 48V automotive demands

Infineon has introduced new packages for its 80V and 100V MOSFETs with OptiMOS 5 technology to meet the requirements of automotive 48V systems.

The company expects significant growth in automotive 48V systems in the coming years and has set up a new manufacturing process to produce the chips on its line for 300mm thin wafers in Dresden, Germany.

Nearly all new cars will have a partially or fully electric powertrain, with production of models with 48V power supply and a mild hybrid drive expected to increase more than ten fold between 2020 and 2030. The 48V systems will join the company’s high voltage systems in battery-electric drives and full and plug-in hybrids.

Infineon offers a selection of 80V and 100V MOSFETs in OptiMOS 5 technology with very low, scalable on-state resistances down to 1.2 mOhm.

For the core applications of a mild hybrid (starter generators, battery switches and DC/DC converters) Infineon is expanding its TOLx package family, which is based on the TOLL (TO-Leadless, 10 x 12mm) product for standard copper substrate PCBs and currents up to 300A.

There is also the TOLG (TO Leads Gullwing Design) package with identical footprint for insulated metal substrates (IMS) with aluminium core.

A third member is added to the TOLx family. The TOLT (TO Leads Top-Side Cooling) package (pictured) enables heat dissipation through top-side cooling via the top of the package instead of via the PCB. This allows an increase in power of more than 20 per cent and reduces cooling effort on the board. The start of volume production of TOLT products is planned for 2021.

The company is also adding versions in the S308 package which measure 3.3 x 3.3mm for less power-hungry auxiliaries such as fans and pumps that are also being transferred to the 48V supply. The S308 devices are for lower currents up to 40A. They join the SSO8 package (5.0 x 6.0mm) for currents up to 100A.

Products in TOLL, TOLG, SSO8 and S3O8 packages are now available.

http://www.infineon.com

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