Power Integrations positions 600V Qspeed diodes to replace SiCs options
Automotive-qualified diodes from Power Integrations, the QH12TZ600Q series, os claimed to have has the lowest reverse recovery charge (Qrr) of any 600V silicon diode. The latest addition to the company’s portfolio of automotive-qualified diodes offers the same low switching loss performance as a silicon carbide (SiC) device without the cost, says Power Integrations.
Automotive on-board charger applications require higher switching frequency to reduce volume and weight. And the QH12TZ600Q diode has a Qrr of 14nC at 25 degrees C, which is half the Qrr of competing silicon diodes, reports the company. It improves the efficiency of power factor correction (PFC) stages in the on-board charger while significantly reducing thermals in PFC MOSFETs.
In common with the earlier Qspeed diodes, the QH12TZ600Q uses merged PiN and Schottky diode technology. The smooth reverse recovery current transition characteristics increase efficiency and also reduce EMI and peak reverse voltage stress, which eliminates the need for snubbers when used as output rectifiers.
The QH12TZ600Q diodes are supplied in the compact, 2.5kV isolated TO-220 package, for direct mounting to metal heat sinking and which also enhances thermal performance. The diodes can be used as a single or interleaved continuous conduction mode (CCM) PFC boost diode or an output rectifier diode in on-board chargers.
