Power module is designed for compact and scalable inverter designs
Infineon Technologies adds a new package, the XHP 3 to its high voltage devices offering. The IGBT module is for high-power applications in the voltage range from 3.3 to 6.5kV.
The module allows for scalable design and its symmetrical design delivers low stray inductance to significantly improve switching behaviour, says Infineon.
The XHP 3 can be used for demanding applications such as traction and commercial, construction and agricultural vehicles as well as medium-voltage drives.
Infineon’s XHP™ 3 package comprises a compact form factor: 140mm in length, 100mm in width and 40mm in height. Initial IGBT modules feature a half bridge topology with a blocking voltage of 3.3kV and a nominal current of 450A. Two isolation classes are launched simultaneously, the 6kV FF450R33T3E3 and the 10.4kV FF450R33T3E3_B5. Ultrasonic welded terminals and aluminium nitride substrates along with an aluminium silicon carbide baseplate contribute to reliability and robustness, adds Infineon.
The high-power IGBT module is designed for paralleling. System designers can adapt the desired power level by paralleling the required number of XHP 3 modules. To facilitate scaling, Infineon offers pre-grouped devices featuring a matched set of static and dynamic parameters. Using these grouped modules, de-rating is no longer required when paralleling up to eight XHP 3 devices.
The XHP 3 3,3kV IGBT modules can be ordered now.