Push pull, three-stage Doherty RF transistor covers sub-6GHz bands
LDMOS transistor technology is the basis for the B11G3338N80D push-pull three-stage, fully integrated Doherty RF transistor used as the carrier product for GEN11 Macro drivers and covering all sub-6GHz frequency bands. The efficient multi-band device from Ampleon covers a frequency range from 3.3 to 3.8GHz, enabling the implementation of high power and macro base stations.
The B11G3338N80D driver is supplied in a PQFN package with dimensions of 12 x 7mm² and which integrate the carrier and peaking devices, input splitter, output combiner and pre-match for each section. The push-pull configuration eliminates the need for an interstage isolator and the integrated pre- and post-match enables the input impedance of 50 Ohms and output impedance of 25 Ohms.
The level of integration in the B11G3338N80D is claimed to “significantly simpliy” the design process, reduce bill of materials cost and assures reliability and volume consistency. The compact pin-to-pin compatible footprint for sub-6GHz bands minimises the layout work, which is essential for today’s space-constrained applications, added Ampleon.
The Doherty transistors typically deliver a drain efficiency of 22 per cent at 12dB power back-off and power gain of 34dB at the quoted test conditions. The design also integrates electrostatic discharge (ESD) protection and bias gate switching.
The B11G3338N80D is available via distributor DigiKey.
Ampleon was created in 2015 and specialises in high-frequency applications based on advanced LDMOS and GaN technologies. Ampleon has a portfolio of products for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, aerospace and defence applications.
