Qorvo offers SiC FETs in surface mount TOLL package 

Surface mount TO leadless (TOLL) packages have been selected by Qorvo for its 750V SiC MOSFETs. The Gen 4 SiC FETs are designed for high power applications. 

The family is Qorvo’s first to be released in the TOLL package with on-resistance ranging from 5.4 to 60 mOhm. The SiC FETs are suitable for use in space-constrained applications such as AC/DC power supplies ranging from several 100W to multiple kW. They are also suitable as solid-state relays and circuit breakers up to 100A.

According to Qorvo, the Gen 4 SiC FETS are “unmatched” in the 600 / 750V class of power FETs across the main figures of merit for on resistance and output capacitance. 

In the TOLL package, at 5.4 mOhm the devices have four to 10 times lower on resistance than competing best-in-class Si MOSFETs, SiC MOSFETs and GaN transistors, said Qorvo. The 750V rating is also 100 to 150V higher than that achievable by alternative technologies, said the company, providing a significantly enhanced design margin for managing voltage transients.

The TOLL package has a 30 per cent smaller footprint than comparable, alternative D2PAK surface mount packages, said Qorvo, and at 2.3mm is half the height. The TOLL package also has what is claimed to be an industry-leading 0.1 degrees C per Watt thermal resistance from junction to case. The DC current rating is 120A up to case temperatures of 144 degrees C and the pulsed current rating is 588A up to 0.5 millisecond. 

Other characteristics are low on resistance and “excellent” transient thermal behaviour, which combine to yield an ‘I2t’ rating which is around eight times better than a Si MOSFET in the same package, reported Qorvo. The result is a robust design which has immunity to transient overloads, while also simplifying the design. There is also a Kelvin source connection in the TOLL package for reliable high-speed switching.

These Gen4 SiC FETs leverage Qorvo’s cascode circuit configuration, in which a SiC JFET is co-packaged with a Si MOSFET to produce a device which has the efficiency of a wide bandgap switch technology combined with the simpler gate drive of silicon MOSFETs.

The Qorvo TOLL-packaged, Gen4 5.4 mOhm SiC FET is included in Qorvo’s FET-Jet online calculator, which is free of charge to use. The calculator allows instant evaluation of efficiency, component losses and junction temperature rise for parts used in a wide variety of AC/DC and isolated/non-isolated DC/DC converter topologies. Single and paralleled devices may be compared under user-specified heat-sinking conditions to determine an optimal solution.


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