Rad-hard MOSFET extends reliable power supplies into extreme space
Able to withstand extreme space environments, the M6 MRH25N12U3 silicon transistor, released by Microchip Technology, is designed for power supplies in space applications.
Power supplies in space applications operate in environments that require enhanced radiation technology to withstand extreme particle interactions and solar and electromagnetic events which can degrade space-based systems and disrupt operation. The M6 MRH25N12U3 radiation-hardened 250V, 0.21 Ohm Rds(on), MOSFET is qualified for commercial aerospace and defence space applications.
The M6 MRH25N12U3 MOSFET provides the primary switching element in power conversion circuits including point of load (PoL) converters, DC/DC converters, motor drives and controls and general purpose switching. The MOSFET withstands the harsh environments of space, extends reliability of power circuitry and meets all requirements of MIL-PRF19500/746 with enhanced performance
The M6 MRH25N12U3 MOSFET is designed for future satellite system designs as well as serving as an alternate source in existing systems. It can withstand total ionizing dose (TID) up to 100 and 300 krad and single event effects (SEE) with linear energy transfer (LET) up to 87MeV/mg/cm2. It provides 100 per cent wafer lot radiation hardness assurance in validation tests.
The M6 MRH25N12U3 is part of Microchip’s broad portfolio of aerospace, defence and space technology that includes FPGAs, microprocessor ICs, linear ICs, power devices, discretes and power modules that integrate both SiC and Si power solutions. Its microcontrollers (MCUs) and analogue products serve high power system control, gate drive and power stage and the company supports developers worldwide with total system solutions.
Microchip completed testing for Defense Logistics Agency (DLA) review and qualification, for the device’s sourcing in the U.S. military supply chain (expected JANSR2N7593U3 certification in June 2021).