RF LDMOS transistor is rugged for ISM applications
Ampleon has released the first in a series of RF power devices based on its Advanced Rugged Technology (ART). The company claims that the ART2K0FE is the industry’s most rugged 2kW RF power LDMOS transistor.
It uses the 9th generation high voltage LDMOS process technology which has been developed to implement extremely rugged transistors with operating voltages of up to 65V.
The ART2K0FE has a frequency response of 0 to 650MHz and is offered in an air-cavity ceramic package designed to withstand the harshest conditions of industrial, scientific and medical (ISM) applications. The transistor can handle very high voltage standing-wave ratio (VSWR) mismatches of 65:1 at 65V, which CO2 lasers and plasma generators can exhibit in operation. In addition to driving high-power CO2 lasers, plasma generators, it can also be used in some MRI systems.
Ampleon says that devices built on the ART process have high impedances to make them easier to integrate into products during the development phase. This also ensures greater product consistency in mass production. The process also enables devices with greater efficiency than competing LDMOS offerings, claims the company, to reduce operating costs of end applications by wasting less of the input electrical energy as heat. It also allows the devices to have greater power density, which means they can be offered in smaller and lower-cost packages, to occupy less space on the boards.
A high breakdown voltage helps ensure that they will work consistently and reliably throughout their intended lifespan. Ampleon guarantees that the devices will be available for 15 years.
The ART2K0FE is sampling now. Reference circuits are available at different frequencies. Ampleon also offers a lower thermal resistance over-moulded plastic version, the ART2K0PE. Production for both transistors is expected in the second half of 2019.
Ampleon was formed in 2015, Ampleon and has more than 1,350 employees worldwide
