Richardson RFPD adds 1200V SiC power MOSFETs from Wolfspeed
Based on third-generation planar MOSFET technology, a family of 1200V silicon carbide (SiC) power MOSFETs from Wolfspeed, are now available from Richardson RFPD.
They have a rugged intrinsic body diode that allows for third-quadrant operation without the need for an additional external diode, says the distributor. According to Wolfspeed, a Cree company, the C3M00xx120D family includes the lowest Rds(on) at 1200V in a discrete package with a flat RDS (on) over temperature.
The devices are built on proven, reliable third-generation planar MOSFET technology, and are designed with an increased gate capacitance CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS (output capacitance) behaviour. Designers can reduce component count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance, reports Richardson RFPD.
The C3M00xx120D SiC MOSFETs are suitable for a range of applications, including solar energy systems, electric vehicle (EV) charging, uninterruptible power supply (UPS), switch mode power supplies (SMPS), motor control and drives, and energy storage.
Maximum junction temperature for all three models in the family is 175 degrees C, with current rating at 25 degrees C of 115A (C3M0016120D), 100A (C3M0021120D) and 63A (C3M0032120D). RDS (on) at 25 degrees C is 16, 21 or 32 milliOhm, depending on the model.
All are provided in a TO-247-3 package.
Richardson RFPD is an Arrow Electronics company, specialising in RF, wireless, IoT and power technologies markets. It has worldwide design centres and technical sales team provide comprehensive support for electronic component design or complete solutions and from prototype to production.