Richardson RFPD Introduces NXP’s GaN-on-SiC transistor
Designed for RF energy applications, the MRF24G300HS from NXP Semiconductors is a 300W CW GaN transistor designed for industrial scientific and medical (ISM) applications and is available from Richardson RFPD.
Richardson RFPD, an Arrow Electronics company, has announced availability and full design support capabilities for the RF power GaN transistor. The transistor is intended for ISM applications at 2,450Hz. It offers 73 per cent drain efficiency at 2,450MHz in a small form factor due to the high-power density of GaN which enables the device to reach high-output power in a small footprint.
The device is suitable for use in CW, pulse, cycling and linear applications, including industrial heating, welding and heat sealing, plasma generation, lighting, scientific instrumentation, microwave ablation and diathermy. The high-gain, high-efficiency device is easy to use and provides long life in even the most demanding environments. It can be used in a single-ended or push-pull configuration and is input-matched to simplify the input circuitry. It is qualified up to 55V operation and is supplied in a NI-780S-4L package.
A test fixture is also available.
Richardson RFPD, an Arrow Electronics company, specialises in the RF, wireless, IoT and power technologies markets. It has relationships with many of the industry’s top radio frequency and power component suppliers and offers support for customers designing components or engineering complete solutions. Richardson RFPD’s worldwide design centres and technical sales team provide comprehensive support for customers from prototype to production.
