Rutronik praises Diotec’s DI080N06PQ for compact efficiency
Increased overall efficiency in a compact power housing, is how Rutronik describes the DI080N06PQ n-channel power MOSFET from Diotec Semiconductor. It is supplied in a compact 5.0 x 6.0mm power QFN package. Above all, said the distributor, it impresses with its low on-state resistance as well as a particularly low thermal resistance at a junction temperature of -55 to +150 degrees C.
The MOSFETs are suitable for commercial and industrial applications such as power tools, power supplies, or synchronous rectifiers, battery chargers, DC/DC converters or synchronous rectifiers. They are available in tape and reel packaging.
At a nominal 105A and 65V, the MOSFETs are characterised by low on state resistance – RDS(on), fast switching times, and very low thermal resistance. They also have a low gate threshold voltage, which enables control at the logic level. The low gate and output charging improves efficiency and reduces power losses, added Rutronik.
The DI080N06PQ n-channel power MOSFETs are robust, RoHS compliant, and AEC-Q101 qualified. They are available in a small power QFN package and weigh approximately 0.1g.
Rutronik Elektronische Bauelemente was founded in 1973. The independent family-owned company is based in Ispringen, Germany and has more than 80 offices worldwide and logistics centres in Austin (Texas), Shanghai, Singapore and Hong Kong, for comprehensive customer support in Europe, Asia, and North America.
Rutronik focuses on high growth future markets that will shape the world of electronics tomorrow. These are advanced materials, advanced measurement, processing and analytics, advanced robotics, automation, biotechnology, energy and power, future mobility, IIoT and internet of everything, industry 4.0, medical and healthcare, and transportation, logistics and the supply chain.
Services range from competent technical support in product development and design-ins,to the company’s software and hardware solutions with partly patented Rutronik IP.
