Schottky diodes provide zero reverse recovery

The latest series of 650V silicon carbide (SiC) Schottky diodes from ON Semiconductor includes surface mount and through hole packages ranging from 6 to 50 A.

All the diodes provide zero reverse recovery, low forward voltage, temperature independent current stability, high surge capacity and positive temperature coefficient.

Aimed at engineers designing PFC and boost converters for various applications including solar PV inverters, EV/HEV chargers, telecom power and data centre power supplies, the new diodes can also deliver smaller footprints at higher efficiencies.

ON Semiconductor says the 650V devices offer the combined system benefits of higher efficiency, higher power density, smaller footprints and enhanced reliability. They exhibit a reduced power loss owing to the inherent low forward voltage (VF) and no reverse recovery charge of SiC diodes.

The faster recovery of SiC diodes allows for higher switching speeds and therefore reduces the size of magnetics and other passive components, enabling greater power density and smaller overall circuit designs. In addition, the SiC diodes can withstand high surge currents and deliver stability over their -55 to +175 degrees C operating temperature range.

ON Semiconductor’s SiC Schottky diodes feature a patented termination structure that reinforces reliability and enhances stability and ruggedness. Additionally, the diodes offer high avalanche energy, the industry’s highest unclamped inductive switching capability and lowest leakage currents, says the company.

The new series complements the company’s existing 1200V SiC devices, bringing a broader product range to our customers,” said Simon Keeton, senior vice- president and general manager, MOSFET business unit, ON Semiconductor. 

“Utilising the unique characteristics of wide band gap materials, SiC technology offers tangible benefits over silicon, and their robust construction provides a dependable solution in applications in challenging environments. Our customers will benefit from simplified, better performing, smaller footprint designs as a result of these new devices.” 

The 650 V SiC diode devices are offered in DPAK, TO-220, and TO-247 packages and are priced from $1.30 to $14.39 per unit in 1,000 unit quantities.

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