Shielded MOSFETs switch at sub-logic level

To address the shortage of supply of MOSFETs that can reliably handle high currents at low threshold voltages have been developed by MaxPower, and is available via distribution partner, FinePower.

An initial introduction of Shielded Field Plated Trench MOSFETs, or SFPMOS, have a rated on state resistance Rds(on) of just four mOhms at a gate voltage of U_GS of 1.0V. The breakdown voltage U_BR is 40V. Below this threshold, leakage currents over a wide temperature range are extremely low, reports MaxPower. At an operating temperature of 25 degrees C, they are well below one microA and rise to only one milliA at 150 degrees C. SFPMOS is particularly suitable for use when long battery life is important, for example in mobile devices, explains MaxPower.

The SFPMOS series consists of power transistors with breakdown voltages from eight to 200V. They are available in a variety of packages, including SC-75 / SOT-416, PQFN 3×3 and PQFN 5×6.

MaxPower Semiconductor is based in San Jose, California, USA. It develops and supplies a wide range of discrete power semiconductors.

Finepower has been a partner for customers and suppliers worldwide, since 2001. It is the local contact for the European and Asian market, says the company, with subsidiaries in Germany and China.

The distributor specialises in power semiconductors, fans and heat sinks, passive components as well as complete power supplies and DC/DC converters.

An engineering team of experienced engineers develops hardware and software and its development division offers individual solutions for electrical energy conversion, e.g. for the supply of renewable energy sources, battery charging for electric cars with or without cables, adaptation of different voltage levels in vehicles or the supply of industrial automation systems.

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